Description: IRFP140N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 140 W Maximum Drain-Source Voltage 'Vds': 100 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 33 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 94(max) nC Rise Time (tr): 39 nS Drain-Source Capacitance (Cd): 330 pF Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm Package: TO247 Package Included: 10pcs IRFP140N IR Power N-Channel MOSFET Transistor HEXFET TO-247
Price: 12.97 USD
Location: Villa Park, Illinois
End Time: 2024-09-13T03:54:20.000Z
Shipping Cost: N/A USD
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Item Specifics
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Brand: International Rectifier
Bundle Description: 10pcs IRFP140N IR Power N-Channel MOSFET Transistor HEXFET TO-247
Mounting Style: Through-Hole
Number of Pins: 3
Package/Case: TO-247
Packaging: Tube
Series: IRFP140N
Type: N-Channel Enhancement Mode MOSFET
MPN: IRFP140N
