Description: Description: Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingFully Avalanche Rated Specification:Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 200 WMaximum Drain-Source Voltage 'Vds': 55 VMaximum Gate-Source Voltage 'Vgs': 20 VMaximum Gate-Threshold Voltage 'Vgs(th)': 4 VMaximum Drain Current 'Id': 110 AMaximum Junction Temperature (Tj): 175 °CTotal Gate Charge (Qg): 146(max) nCRise Time (tr): 101 nSDrain-Source Capacitance (Cd): 781 pFMaximum Drain-Source On-State Resistance (Rds): 0.008 Ohm Package Included:20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power TransistorOn Jul 18, 2024 at 14:32:01 PDT, seller added the following information:
Price: 12.58 USD
Location: Bordentown, New Jersey
End Time: 2024-08-20T07:08:17.000Z
Shipping Cost: 0 USD
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Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
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Bundle Description: 20pcs IRF3205 IR MOSFET N-CHANNEL TO-220 Transistor
Function: Power Transistor
Transistor Type: MOSFET
Model: IRF3205
Type of Control Channel: N -Channel
Rise Time (tr): 101 nS
Feature: Ultra Low On-Resistance, Dynamic dv/dt Rating, Fast Switching
QTY: 20PCS
Brand: Unbranded
MPN: IRF3205
Maximum Operating Temperature: 175 °C (347 °F)
Mounting Style: Through-Hole
Number of Pins: 3
Transistor Category: Power Transistor
Type: N-Channel Enhancement Mode MOSFET
Maximum Base-Emitter Voltage: 55V
Maximum DC Collector Current: 110A
Maximum Power Dissipation: 200W
Packaging: Tube (管)
Series: IRF3205
