Description: 5pcs IRF510N IRF510 Power MOSFET N-Channel Transistor 5.6A 100V IRF510PBF TO-220 Ships From from USA in anti-ESD packing with tracking IRF510 Description IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The IRF510 is a high-speed N-Channel power MOSFET with an output load capability of up to 5.6A and load voltage up to 100V. The IRF510 power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The IRF510 can be operated directly from integrated circuits. IRF510 Features Package Type: TO-220 Transistor Type: N Channel Max Voltage Applied From Drain to Source: 100 V Max Gate to Source Voltage: ±20 V Max Continues Drain Current: 5.6 A Max Pulsed Drain Current: 20 A Max Power Dissipation: 43 W Minimum Voltage Required to Conduct: 2 V to 4 V Max Storage & Operating temperature: -55 to +170 Celsius IRF510 Advantages Dynamic dV/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements Where to use IRF510 The IRF510 can be used in normal and high-speed applications such as DC to DC converters, UPS, power supplies, etc. It can drive high-power relays switches with very low power. And it can be used to drive high-power transistors or any application that requires speed switching with low gate power. What's more, due to its low gate power requirements, it can be operated directly from ICs, microcontrollers, and many electronic platforms such as Arduino, raspberry pi, etc. Other than that, it can also be used to build high-power audio amplifier circuits or be used as a separate amplifier to drive speakers. IRF510 Applications Fast Switching Uninterruptible Power Supplies Battery Chargers & Management Systems Solar Battery Chargers & Applications Solar Uninterruptible Power Supplies Motor Driver Circuits Computer & telecommunication applications
Price: 8.75 USD
Location: Los Angeles, California
End Time: 2024-11-16T15:19:11.000Z
Shipping Cost: 0 USD
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Item Specifics
Restocking Fee: No
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
MPN: Does Not Apply
Transistor Category: Power Transistor
Item Width: 4.7 mm
Function: power MOSFET
Series: IRF510
Unit Type: Unit
Item Length: 10.41 mm
Item Height: 9.01 mm
Configuration: Single
Minimum Operating Temperature: -55 °C (-67 °F)
Number of Elements per Chip: 1
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: 175 °C (347 °F)
Model: N-Channel
Maximum Base-Emitter Voltage: 20 V
Maximum Power Dissipation: 43 W
Unit Quantity: 5
Number of Pins: 3
Peak Surge Current: 20 A
Brand: IR
Mounting Style: Through-Hole
Package/Case: TO-220
Type: N-Channel Depletion Mode MOSFET
