Description: VDSS = 200V Rds(on) max = 0.075Ω ID = 30A FEATURES Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements DESCRIPTION Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Package Included: 5pcs IRFP250N IRFP250 Power MOSFET N-Channel Transistor 30A 200V TO-247
Price: 8.45 USD
Location: Villa Park, Illinois
End Time: 2024-09-14T04:38:42.000Z
Shipping Cost: N/A USD
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Item Specifics
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Brand: International Rectifier
Mounting Style: Through-Hole
Series: IRFP250N
Type: N-Channel Enhancement Mode MOSFET
Bundle Description: 5pcs IRFP250N IRFP250 MOSFET N-Channel Transistor
Number of Elements per Chip: 1
Number of Pins: 3
Packaging: Tube
Package/Case: TO-247
MPN: IRFP250N
Transistor Category: Power Transistor
